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this is information on a product in full production. july 2014 docid16935 rev 8 1/17 2n5551hr hi-rel npn bipolar transistor 160 v, 0.5 a datasheet - production data figure 1. internal schematic diagram features ? hermetic packages ? escc and jans qualified ? up to 100 krad(si) low dose rate description the 2n5551hr is a silicon planar npn transistor specifically designed and housed in hermetic packages for aerospace and hi-rel applications. it is available in the jan qualification system (mil-prf19500 compliance) and in the escc qualification system (escc 5000 compliance). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. to-18 lcc-3 3 1 2 ub 3 1 2 pin 4 in ub is connected to the metallic lid. 3 1 2 4 bv ceo 160 v i c (max) 0.5 a h fe at 5 v - 10 ma > 80 table 1. device summary device qualification system agency specification package radiation level eppl jansr2n5551ubx jansr mil-prf- 19500/761 ub 100 krad high and low dose rate - jans2n5551ubx jans mil-prf- 19500/761 ub - - 2n5551rubx escc flight 5201/019 ub 100 krad - low dose rate target 2n5551ubx escc flight 5201/019 ub - target soc5551rhrx escc flight 5201/019 lcc-3 100 krad - low dose rate yes soc5551hrx escc flight 5201/019 lcc-3 - yes 2n5551rhrx escc flight 5201/019 to-18 100 krad - low dose rate - 2n5551hrx escc flight 5201/019 to-18 - - www.st.com
contents 2n5551hr 2/17 docid16935 rev 8 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 lcc-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 to-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 ub . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid16935 rev 8 3/17 2n5551hr electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 180 v v ceo collector-emitter voltage (i b = 0) 160 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current for to-18 for lcc-3 and ub 0.6 0.5 a a p tot total dissipation at t amb 25 c for to-18 for lcc-3 and ub for lcc-3 and ub (1) total dissipation at t c 25 c for to-18 1. when mounted on a 8 x 10 x 0.6 mm ceramic substrate. 0.36 0.36 0.58 1.2 w w w w tstg storage temperature -65 to 200 c tj max. operating junction temperature 200 c table 3. thermal data for through-hole package symbol parameter value unit r thjc thermal resistance junction-case __ max 146 c/w r thja thermal resistance junction-ambient __ max 486 c/w table 4. thermal data for smd package symbol parameter value unit r thja thermal resistance junction-ambient __ max 486 c/w thermal resistance junction-ambient (1) __ max 1. when mounted on a 8 x 10 x 0.6 mm ceramic substrate. 302 c/w
electrical characteristics 2n5551hr 4/17 docid16935 rev 8 2 electrical characteristics t case = 25 c unless otherwise specified. table 5. electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector-base cut-off current (i e = 0) v cb = 120 v v cb = 120 v t c = 150 c - 50 50 na a i ebo emitter-base cut-off current (i c = 0) v eb = 4 v - 50 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 180 - v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 1.5% collector-emitter breakdown voltage (i b = 0) i c = 1 ma 160 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 10 ma i b = 1 ma i c = 50 ma i b = 5 ma - 0.15 0.2 v v v be(sat) (1) base-emitter saturation voltage i c = 10 ma i b = 1 ma i c = 50 ma i b = 5 ma - 1 1 v v h fe (1) dc current gain i c = 1 ma v ce = 5 v i c = 10 ma v ce = 5 v i c = 50 ma v ce = 5 v i c = 10 ma v ce = 5 v t amb = - 55 c 80 80 30 20 - 250 h fe small signal current gain for escc v ce = 10 v i c = 10 ma f > 1 khz 50 - for jans v ce = 10 v i c = 10 ma f > 20 khz 2.5 h fe small signal current gain v ce = 10 v i c = 10 ma f > 100 mhz 1- c obo output capacitance (i e = 0) v cb = 10 v f = 1 mhz - 6 pf c ebo emitter-base capacitance (i c = 0) for escc v eb = 5 v f = 1 mhz -20pf for jans v eb = 500 mv f = 1 mhz 45 pf
docid16935 rev 8 5/17 2n5551hr electrical characteristics 17 2.1 electrical characteristics (curves) figure 2. h fe @ v ce = 5 v figure 3. v ce(sat) @ h fe =10 figure 4. v be(sat) @ h fe =10 i c (a) 0.001 0.1 0.01 10 100 1000 t j = -55c t j = -40c t j = 25c t j = 110c t j = 125c am16336v1 i c (a) 0.001 0.1 0.01 0.01 0.1 1 t j = -55c t j = -40c t j = 25c t j = 110c t j = 125c am16337v1 i c (a) 0.001 0.1 0.01 0.4 0.5 1 t j = -55c t j = -40c t j = 25c t j = 110c t j = 125c 0.6 0.7 0.8 0.9 am16338v1
radiation hardness assurance 2n5551hr 6/17 docid16935 rev 8 3 radiation hardness assurance the products guaranteed in radiation within the jans system fully comply with the mil- prf-19500/761 specification. the products guaranteed in radiation within the escc system fully comply with the escc 5201/019 and escc 22900 specifications. jans radiation assurance st jans parts guaranteed at 100 krad (si), tested, in full compliancy with the mil-prf- 19500 specification, specifically the group d, subgroup 2 inspection, between 50 and 300 rad/s. on top of the standard jansr high dose rate by wafer lot guarantee, st 2n5551hr series include an additional wafer by wafer 100 krad low dose rate guarantee at 0.1 rad/s, identical to the escc 100 krad guarantee. it is supported with the same radiation verification test report provided with each shipment. a brief summary of the standard high dose rate by wafer lot jansr guarantee is provided below: ? all test are performed in accordance to mil-prf-19500 and test method 1019 of mil-std-750 for total ionizing dose. the table below provides for each monitored parameters of the test conditions and the acceptance criteria. table 6. mil-prf-19500 (test method 1019) post radiation electrical characteristics symbol parameter test conditions value unit min. max. i cbo collector to base cutoff current v cb = 120 v 100 na i ebo emitter to base cutoff current v eb = 4 v 100 na v (br)ceo breakdown voltage, collector to emitter i c = 1 ma 184 v v (br)bco breakdown voltage, base to collector i c = 100 a 207 v v (br)ebo breakdown voltage, emitter to base i eb = 10 a 6.9 v h fe forward-current transfer ratio v ce = 5 v; i c = 1 ma [40] (1) 1. see method 1019 of mil-std-750 for how to determine [h fe ] by first calculating the delta (1/h fe ) from the pre- and post-radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre-radiation minimum h fe that it is based upon. v ce = 5 v; i c = 10 ma [40] (1) 250 v ce = 5 v; i c = 50 ma [15] (1) v ce(sat) collector-emitter saturation voltage i c = 10 ma; i b = 1 ma 0.1725 v i c = 50 ma; i b = 5 ma 0.23 v be(sat) base-emitter saturation voltage i c = 10 ma; i b = 1 ma 1.15 v i c = 50 ma; i b = 5 ma 1.15
docid16935 rev 8 7/17 2n5551hr radiation hardness assurance 17 escc radiation assurance each product lot is tested according to the escc basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable escc generic and/or detailed specification. st goes beyond the escc specification by performing the following procedure: ? test of 11 pieces by wafer, 5 biased at least 80% of v (br)ceo , 5 unbiased and 1 kept for reference ? irradiation at 0.1 rad (si)/s ? acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in table 7 ? delivery together with the parts of the radiation verification test (rvt) report of the particular wafer used to manufacture the products. this rvt includes the value of each parameter at 30, 50, 70 and 100 krad (si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100c.
radiation hardness assurance 2n5551hr 8/17 docid16935 rev 8 table 7. escc 5201/019 post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 120 v - 50 na i ebo emitter cut-off current (i c = 0) v eb =4 v - 50 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 180 - v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2 % collector-emitter breakdown voltage (i b = 0) i c = 1 ma 160 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 10 ma i b = 1 ma i c = 50 ma i b = 5 ma - 0.2 0.2 v v v be(sat) (1) base-emitter saturation voltage i c = 10 ma i b = 1 ma i c = 50 ma i b = 5 ma 1 1 v v [h fe ] (1) post irradiation gain calculation (2) 2. the post-irradiation gain calculation of [h fe ], made using h fe measurements from prior to and on completion of irradiation testing and after each anneali ng step if any, shall be as specified in milstd-750 method 1019. i c = 1 ma v ce = 5 v i c = 10 ma v ce = 5 v i c = 50 ma v ce = 5 v [40] [40] [15] - 250
docid16935 rev 8 9/17 2n5551hr package mechanical data 17 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 lcc-3 figure 5. lcc-3 drawings 2 1 3
package mechanical data 2n5551hr 10/17 docid16935 rev 8 4.2 to-18 figure 6. to-18 drawings table 8. lcc-3 mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.45 0.50 0.56 d 0.60 0.76 0.91 e 0.91 1.01 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.17 i 2.41 2.54 2.66 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.40 0.50 0.60 m 2.46 2.54 2.62 n 1.80 1.90 2.00 r 0.30
docid16935 rev 8 11/17 2n5551hr package mechanical data 17 4.3 ub figure 7. ub drawing table 9. to-18 mechanical data dim. mm. min. typ. max. a 12.7 b 0.49 d 5.3 e 4.9 f 5.8 g 2.54 h 1.2 i 1.16 l 45
package mechanical data 2n5551hr 12/17 docid16935 rev 8 table 10. ub mechanical data dim. mm min. typ. max. a - 12.70 14.20 b0.400.49 c0.580.74 d6.006.40 e8.158.25 f9.109.20 g4.935.23 h0.850.95 i0.750.85 l 42 48
2n5551hr order codes docid16935 rev 8 13/17 5 order codes table 11. order codes cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing j2n5551ub1 - - engineering model jans - ub gold j5551ub1 wafflepack 2n5551ub1 - - engineering model escc - ub gold 2n55511ub1 wafflepack soc55511 - - engineering model escc - lcc-3 gold soc55511 wafflepack jansr2n5551ubg mil-prf- 19500/761 - jansr 100 krad high and low dose rate ub gold jsr5551 wafflepack jansr2n5551ubt mil-prf- 19500/761 - jansr 100 krad high and low dose rate ub solder dip jsr5551 wafflepack jans2n5551ubg mil-prf- 19500/761 - jans - ub gold js5551 wafflepack jans2n5551ubt mil-prf- 19500/761 - jans - ub solder dip js5551 wafflepack 2n5551rubg 5201/019/08r target escc flight 100 krad - low dose rate ub gold 520101908r wafflepack 2n5551rubt 5201/019/09r target escc flight 100 krad - low dose rate ub solder dip 520101909r wafflepack 2n5551ubg 5201/019/08 target escc flight - ub gold 520101908 wafflepack 2n5551ubt 5201/019/09 target escc flight - ub solder dip 520101909 wafflepack soc5551rhrg 5201/019/04r yes escc flight 100 krad - low dose rate lcc-3 gold 520101904r wafflepack soc5551rhrt 5201/019/05r yes escc flight 100 krad - low dose rate lcc-3 solder dip 520101905r wafflepack soc5551hrg 5201/019/04 yes escc flight - lcc-3 gold 520101904 wafflepack
order codes 2n5551hr 14/17 docid16935 rev 8 contact st sales office for information about the specific conditions for: ? products in die form ? other jans quality levels ? tape and reel packing soc5551hrt 5201/019/05 yes escc flight - lcc-3 solder dip 520101905 wafflepack 2n5551rhrg 5201/019/01r - escc flight 100 krad - low dose rate to-18 gold 520101901r strip pack 2n5551rhrt 5201/019/02r - escc flight 100 krad - low dose rate to-18 solder dip 520101902r strip pack 2n5551hrg 5201/019/01 - escc flight - to-18 gold 520101901 strip pack 2N5551HRT 5201/019/02 - escc flight - to-18 solder dip 520101902 strip pack 1. high dose rate as per mil-prf-19500 specif ication group d, subgroup 2 inspection. low dose rate as per escc specification 229 00. 2. specific marking only. the full marking includes in addition: for the engineering models: st l ogo, date code; country of orig in (fr). for escc flight parts: st logo, date code, country of origin (fr), esa logo, serial number of the part within the assembly lot. for jans flight parts: st logo, date code, country of origin (fr), manufacturer code (cstm), serial number of the part within the assembly lot. table 11. order codes (continued) cpn agency specification eppl quality level radiation level (1) package lead finish marking (2) packing
docid16935 rev 8 15/17 2n5551hr shipping details 17 6 shipping details 6.1 date code date code xyywwz is structured as below table: 6.2 documentation table 12. date code xyywwz e m (escc & jans) 3 last two digits of the year week digits lot index in the week e s c c flight - j a n s f l i g h t (diffused in singapore) w table 13. documentation provided for each type of product quality level radiation level documentation engineering model - - jans flight - certificate of conformance jansr flight mil-std 100 krad certificate of conformance 50 rad/s radiation verification test report st 100 krad certificate of conformance 0.1 rad/s radiation verification test report on each wafer escc flight - certificate of conformance 100 krad certificate of conformance 0.1 rad/s radiation verification test report
revision history 2n5551hr 16/17 docid16935 rev 8 7 revision history table 14. document revision history date revision changes 04-jan-2010 1 initial release 17-may-2010 2 modified: table 1: device summary and table 9 on page 11 12-jul-2010 3 modified: table 1: device summary and table 9 on page 11 13-nov-2012 4 added: section 2.1: electrical characteristics (curves) 12-dec-2013 5 updated table 1: device summary , table 2: absolute maximum ratings and section 4: package mechanical data . added section 5: order codes and section 6: shipping details 27-mar-2014 6 updated table 1: device summary , section 3: radiation hardness assurance , figure 7: ub drawing , section 5: order codes and table 13: documentation provided for each type of product . minor text changes. 01-apr-2014 7 inserted note in package silhouette on cover page. 14-jul-2014 8 updated table 1: device summary and table 11: order codes .
docid16935 rev 8 17/17 2n5551hr 17 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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